Hybrid orientation substrate with stress layer
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsLee Wee Teo, Chung Woh Lai, Johnny Widodo, Shyue Seng Tan, Shailendra Mishra, Zhao Lun, Yong Meng Lee, Jeffrey Chee
Life of this patent
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Abstract
A hybrid orientation substrate includes a base substrate having a first orientation, a first surface layer having a first orientation disposed on the base substrate in a first region, and a second surface layer disposed on the base substrate in a second region. The second surface layer has an upper sub-layer having a second orientation, and a lower sub-layer between the base substrate and the upper sub-layer. The lower sub-layer having a first stress induces a second stress on the upper sub-layer.
Claims16
A method of fabricating a hybrid orientation substrate comprising the steps of:
- providing a substrate comprising
- a first region;
- the first region having a first surface layer having a first substrate orientation,
- a second region;
- the second region having a second surface layer having a second substrate orientation, the first and second regions are electrically isolated by an isolation region,
- the second surface layer comprising a plurality of sub-layers over the second region, wherein the plurality of sub-layers comprise an upper sub-layer comprising a semiconductor material having a second crystal orientation over a lower sub-layer comprising a first and a second pad buried layers sandwiching a stress layer having a neutral or moderate tensile stress;
- and
- converting the stress layer to a high tensile stress layer, wherein converting the stress layer comprises subjecting the substrate to an ultra violet (UV) treatment.
A method of fabricating a hybrid orientation substrate comprising the steps of:
- providing a substrate comprising
- a first region;
- the first region having a first surface layer having a first substrate orientation,
- a second region;
- the second region having a second surface layer having a second substrate orientation, the first and second regions are electrically isolated by an isolation region,
- the second surface layer comprises a stress layer over the second region, wherein the stress layer is formed below a semiconductor material having a second crystal orientation and comprises a composite sub-layer having a plurality of buried layers, the stress layer having a neutral or moderate tensile stress;
- and
- subjecting the substrate to an ultra violet (UV) treatment to convert the stress layer to a high tensile stress layer.
A method of fabricating a hybrid orientation substrate comprising the steps of:
- providing a surface substrate comprising
- a first region having a first layer with a first substrate orientation,
- a second region having a second layer with a second substrate orientation, the first and second regions are electrically isolated by an isolation region, wherein the second layer comprises a semiconductor material having a second crystal orientation formed over a stress layer comprising a composite layer having a plurality of buried layers, the stress layer having a neutral or moderate tensile stress over it;
- bonding the surface substrate to a base substrate, wherein the base substrate has the same substrate orientation as the first layer;
- and
- converting the stress layer of the second region to a high tensile stress layer, wherein converting the stress layer comprises subjecting the substrate to an ultra violet (UV) treatment.
Dependencies are inferred from the claim text.