Method for fabricating a semiconductor memory device having a buried word line structure
AssigneeHynix Semiconductor Inc.
InventorHan Nae Kim
Life of this patent
Estimating the term…
Abstract
A method for fabricating a semiconductor apparatus including a buried gate removes factors deteriorating the operational reliability of the semiconductor device such as the electrical connection between a contact and a word line, and increases a processing margin when forming the contact disposed on a source/drain region. The method includes forming a recess in a semiconductor substrate, forming a gate in a lower portion of the recess, forming a first insulation layer over the gate, growing silicon over the first insulation layer in the recess, and depositing a second insulation layer over the semiconductor substrate and in the remaining portion of the recess.
Claims14
A method for fabricating a semiconductor apparatus, the method comprising:
- forming a recess in a semiconductor substrate, the recess having a lower portion and an upper portion;
- forming a gate in the lower portion of the recess;
- forming a first insulation layer over the gate and in the upper portion of the recess;
- forming a silicon growth region using an epitaxial growth method, the silicon growth region having a lateral extension, the lateral extension being provided over the first insulation layer in the recess and extending laterally in the recess from the semiconductor substrate through a sidewall of the recess;
- and
- forming a second insulating layer on the first insulating layer.
A semiconductor device, comprising:
- a gate formed in a recess that is formed in a semiconductor substrate;
- an insulation layer formed over the gate in the recess;
- a silicon growth region obtained by an epitaxial growth method, the silicon growth region having a lateral extension provided over the insulation layer and extending laterally into the recess from the semiconductor substrate through a sidewall of the recess:
- and
- a second insulating layer formed on the insulating layer.
Dependencies are inferred from the claim text.