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US 8,274,102 B2Granted
Semiconductor device
AssigneeHynix Semiconductor Inc.
InventorYun Taek Hwang
Life of this patent
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Abstract
A semiconductor device includes a PMOS transistor of a peripheral circuit region. The PMOS transistor is formed over a silicon germanium layer to have a compressive strain structure, thereby increasing hole mobility of a channel region in operation of the device. The semiconductor device may include a second active region including a silicon layer connected to a first active region of a semiconductor substrate, a silicon germanium layer formed over the silicon layer expected to be a PMOS region, and a PMOS gate formed over the silicon germanium layer.
Claims12
A semiconductor device comprising:
- a first active region formed in a semiconductor substrate;
- a second active region located over the first active region, wherein the second active region is coupled to the first active region;
- a silicon germanium layer formed in a PMOS region of the second active region;
- a PMOS gate formed over the silicon germanium layer formed in the PMOS region of the second active region;
- and
- an NMOS gate formed over the second active region.
3 more elements
A semiconductor device comprising:
- an active region formed in a semiconductor substrate;
- a silicon germanium layer formed in a PMOS region of the active region;
- a PMOS gate formed over the silicon germanium layer formed in a PMOS region of the active region;
- and
- an NMOS gate formed over the active region.
2 more elements
Dependencies are inferred from the claim text.