US 8,274,096 B2 · Semiconductor device and method

Abstract

The present invention is directed to a semiconductor device that includes at least one p-n junction including a p-type material, an n-type material, and a depletion region. The at least one p-n junction is configured to generate bulk photocurrent in response to incident light. The at least one p-n junction is characterized by a conduction band energy level, a valence band energy level and a surface Fermi energy level. The surface Fermi energy level is pinned either near or above the conduction band energy level or near or below the valence band energy level. A unipolar barrier structure is disposed in a predetermined region within the at least one p-n junction. The unipolar barrier is configured to raise the conduction band energy level if the surface Fermi energy level is pinned near or above the conduction band energy level or lower the valence band energy level if the surface Fermi energy level is pinned near or below the valence band energy level such that the unipolar barrier is configured to propagate the bulk photocurrent and substantially block surface leakage current. The at least one p-n junction and the unipolar barrier are integrally formed.

Claims32

Dependent claims

A semiconductor device comprising:

at least one p-n junction including a p-type material, an n-type material, and a depletion region, the at least one p-n junction being configured to generate bulk photocurrent in response to incident light, the at least one p-n junction being characterized by a conduction band energy level, a valence band energy level and a surface Fermi energy level, the surface Fermi energy level being pinned either near or above the conduction band energy level or near or below the valence band energy level;
and
a unipolar barrier structure disposed in a predetermined region within the at least one p-n junction, the unipolar barrier being configured to raise the conduction band energy level if the surface Fermi energy level is pinned near or above the conduction band energy level or lower the valence band energy level if the surface Fermi energy level is pinned near or below the valence band energy level such that the unipolar barrier is configured to propagate the bulk photocurrent and substantially block surface leakage current, the at least one p-n junction and the unipolar barrier being integrally formed.

A method for making a semiconductor device, the method comprising:

forming an n-type material;
forming a p-type material, the p-type material and the n-type material forming at least one p-n junction having a depletion region, the at least one p-n junction being configured to generate bulk photocurrent is response to incident light, the at least one p-n junction being characterized by a conduction band energy level, a valence band energy level and a surface Fermi energy level, the surface Fermi energy level being pinned either near or above the conduction band energy level or near or below the valence band energy level;
and
forming a unipolar barrier structure in a predetermined region within the at least one p-n junction, the unipolar barrier being configured to raise the conduction band energy level if the surface Fermi energy level is pinned near or above the conduction band energy level or lower the valence band energy level if the surface Fermi energy level is pinned near or below the valence band energy level such that the unipolar barrier is configured to propagate the bulk photocurrent and substantially block surface leakage current, the n-type material, the p-type material and the unipolar barrier being integrally formed by the method for making the semiconductor device.

1 more element

Dependencies are inferred from the claim text.

Semiconductor device and method

Life of this patent

Semiconductor device and method

Life of this patent

Abstract

Claims32