GaN compound semiconductor light emitting element and method of manufacturing the same
AssigneesSeoul Opto Device Co., Ltd., Postech Foundation
InventorJong Lam Lee
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Abstract
The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a metallic protective film layer with a thickness of at least 10 microns may be formed on the lateral and/or bottom sides of the vertical GaN LED. Further, a metallic substrate may be used instead of a sapphire substrate. A metallic support layer may be formed to protect the element from being distorted or damaged. Furthermore, a P-type electrode may be partially formed on a P—GaN layer in a mesh form.
Claims17
A light emitting element, comprising:
- a substrate;
- a nitride semiconductor structure arranged on the substrate, the nitride semiconductor structure comprising a first-type nitride semiconductor layer, an active layer, and a second-type nitride semiconductor layer;
- a first electrode electrically connected to the first-type nitride semiconductor layer, the first electrode comprising a reflective metallic layer;
- a second electrode arranged on the second-type nitride semiconductor layer;
- and
- a patterned insulation layer arranged between the first-type nitride semiconductor layer and the first electrode,
- wherein a first portion of the patterned insulation layer is arranged directly below the second electrode.
A light emitting element, comprising:
- a substrate;
- a nitride semiconductor structure arranged on the substrate, the nitride semiconductor structure comprising a first-type nitride semiconductor layer, an active layer, and a second-type nitride semiconductor layer;
- a first electrode arranged between the substrate and the first-type nitride semiconductor layer;
- a second electrode arranged on the second-type nitride semiconductor layer;
- and
- an insulation layer arranged between the first-type nitride semiconductor layer and the first electrode,
- wherein the insulation layer comprises a plurality of patterned portions, and at least a first patterned portion is entirely arranged directly below the second electrode.
Dependencies are inferred from the claim text.