Semiconductor light emitting device and method of fabricating the same
AssigneeLG Innotek Co., Ltd.
InventorsHyung Jo Park, Dae Sung Kang, Hyo Kun Son
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Abstract
Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises a multireflection layer comprising at least one of reflection layers of different refractive indices, a first conductive semiconductor layer on the multireflection layers, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer.
Claims20
A semiconductor light emitting device comprising:
- a multi-reflection layer comprising at least two reflection layers with different refractive indices, wherein the multi-reflection layer comprises a hemispherical shape;
- a first conductive type semiconductor layer on the multi-reflection layer;
- an active layer on the first conductive type semiconductor layer;
- and
- a second conductive type semiconductor layer on the active layer.
A method of fabricating a semiconductor light emitting device, the method comprising:
- alternately forming reflection layers having different refractive indices on a substrate;
- forming a photoresist pattern on an uppermost layer of the reflection layers;
- performing a reflow heating process on the photoresist pattern to form a hemispherical photoresist pattern;
- etching the reflection layers along the photoresist pattern to form a hemispherical multi-reflection layer including the reflection layers;
- forming a first conductive type semiconductor layer on the substrate and the multi-reflection layer;
- forming an active layer on the first conductive type semiconductor layer;
- and
- forming a second conductive type semiconductor layer on the active layer.
A semiconductor light emitting device comprising:
- a substrate;
- a multi-reflection layer on the substrate and comprising at least two reflection layers with different refractive indices;
- a first conductive type semiconductor layer on the multi-reflection layer;
- an active layer on the first conductive type semiconductor layer;
- and
- a second conductive type semiconductor layer on the active layer,
- wherein the multi-reflection layer directly contacts the substrate,
- wherein the multi-reflection layer has a first multi-reflection layer and a second multi-reflection layer, and
- wherein the first multi-reflection layer is spaced apart from the second multi-reflection layer.
Dependencies are inferred from the claim text.