Pixel structure and fabrication method thereof

A fabrication method of a pixel structure, comprising:

• providing a substrate which has a thin film transistor region and a pixel electrode region;
• and
• forming a thin film transistor at the thin film transistor region, and forming a storage capacitor at the pixel electrode region;
• wherein a drain conduction layer of the thin film transistor has an extension section extending to the pixel electrode region, and an electrode layer and the extension section of the drain conduction layer serve as an upper electrode and a lower electrode of the storage capacitor, respectively;
• the extension section entirely covers the pixel electrode region, and the capacitance of the storage capacitance is proportional to sizes of the electrode layer and the extension section of the drain conduction layer;
• wherein the thin film transistor has a channel layer, a gate conduction layer, a source conduction layer, and the drain conduction layer, all of which are metallic oxides having indium, gallium, and zinc.

A pixel structure, comprising:

• a substrate having a thin film transistor region and a pixel electrode region;
• a thin film transistor formed at the thin film transistor region, the thin film transistor including a drain conduction layer which has an extension section extending to the pixel electrode region and a pixel electrode layer which electrically connects with the drain conduction layer through a via hole, wherein the thin film transistor further includes a channel layer, a gate conduction layer, a source conduction layer, and the drain conduction layer, all of which are metallic oxides having indium, gallium, and zinc;
• and
• a storage capacitor formed at the pixel electrode region, wherein an electrode layer and the extension section of the drain conduction layer serve as an upper electrode and a lower electrode of the storage capacitor, respectively, and the extension section of the drain conduction layer entirely covers the pixel electrode region, and the capacitance of the storage capacitance is proportional to sizes of the electrode layer and the extension section of the drain conduction layer.