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US 8,274,084 B2Granted
Method and structure for establishing contacts in thin film transistor devices
AssigneePalo Alto Research Center Incorporated
InventorsJurgen H. Daniel, Ana Claudia Arias, Michael Chabinyc
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Abstract
The roughness and structural height of printed metal lines is used to pin a fluid. This fluid deposits a top contact material which is connected to the bottom printed contacts through pinholes in the hydrophobic polymer layer. This results in a sandwich-like contact structure achieved in a self-aligned deposition process and having improved source-drain contact for all-additive printed circuits. In one form, the present technique is used for thin film transistor applications, but it may be applied to electrodes in general.
Claims13
A transistor comprising:
- a gate layer comprising a gate dielectric material;
- a source contact area and drain contact area disposed on the gate layer;
- a first coating deposited on exposed areas of the gate layer and at least portions of the source contact area and the drain contact area, wherein the first coating is an insulating coating;
- a second conductive coating applied to selectively cover at least portions of the first coating covering the source contact area and the drain contact area, wherein the second coating is a conductive coating and establishes electrical contact to the source contact area and the drain contact area;
- and,
- a semiconductor disposed to be in contact with selected portions of the first and second coatings.
3 more elements
Dependencies are inferred from the claim text.