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US 8,274,083 B2Granted
Semiconductor device and a method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMasaya Kadono, Shunpei Yamazaki, Yukio Yamauchi, Hidehito Kitakado
Life of this patent
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Abstract
A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
Claims24
A thin film transistor comprising:
- a base film over a substrate;
- a semiconductor film on and in contact with the base film;
- a gate insulating film on and in contact with the semiconductor film and the base film;
- a gate electrode on and in contact with the gate insulating film;
- and
- a source electrode and a drain electrode which are connected to the semiconductor film;
- wherein a concentration of a contaminating impurity in an interface between the semiconductor film and the gate insulating film is 2×1016 atoms/cm3 or less, and
- wherein a concentration of the contaminating impurity in an interface between the gate insulating film and the gate electrode is 2×1016 atoms/cm3 or less.
5 more elements
A thin film transistor comprising:
- a base film over a substrate;
- a gate electrode on and in contact with the base film;
- a gate insulating film on and in contact with the base film and the gate electrode;
- a semiconductor film on and in contact with the gate insulating film;
- and
- a source electrode and a drain electrode which are connected to the semiconductor film,
- wherein a concentration of a contaminating impurity in an interface between the gate electrode and the gate insulating film is 2×1016 atoms/cm3 or less, and
- wherein a concentration of the contaminating impurity in an interface between the gate insulating film and the semiconductor film is 2×1016 atoms/cm3 or less.
5 more elements
Dependencies are inferred from the claim text.