Semiconductor constructions

A semiconductor construction comprising:

• a semiconductor material base which comprises a projection between a pair of openings;
• the projection having an upper region over a lower region;
• the upper region being at least 75% amorphous, and the lower region being entirely crystalline;
• one or more dielectric materials within said openings to fill the openings;
• at least one transistor gate over the upper region of the projection;
• at least two source/drain regions that extend into the upper region of the projection, and that do not extend into the lower region of the projection;
• the source/drain regions extending only partially into the upper region of the projection to leave some of the upper region between bottoms of the source/drain regions and a top of the lower region;
• and
• wherein the upper region is entirely amorphous.

A semiconductor construction comprising:

• a semiconductor material base which comprises a projection between a pair of openings;
• the projection having an upper region over a lower region;
• the upper region being at least 75% amorphous, and the lower region being entirely crystalline;
• one or more dielectric materials within said openings to fill the openings;
• at least one transistor gate over the upper region of the projection;
• at least two source/drain regions that extend into the upper region of the projection, and that do not extend into the lower region of the projection;
• the source/drain regions extending only partially into the upper region of the projection to leave some of the upper region between bottoms of the source/drain regions and a top of the lower region;
• and
• comprising boron throughout an entirety of the upper region.

A semiconductor construction comprising:

• a semiconductor material base which comprises a projection between a pair of openings;
• the projection having an upper region over a lower region;
• the upper region being at least 75% amorphous, and the lower region being entirely crystalline;
• one or more dielectric materials within said openings to fill the openings;
• at least one transistor gate over the upper region of the projection;
• at least two source/drain regions that extend into the upper region of the projection, and that do not extend into the lower region of the projection;
• the source/drain regions extending only partially into the upper region of the projection to leave some of the upper region between bottoms of the source/drain regions and a top of the lower region;
• and
• comprising dopant having a mass greater than 35 amu throughout an entirety of the upper region.

A semiconductor construction comprising:

• a semiconductor material base which comprises a projection between a pair of openings;
• the projection having an upper region over a lower region;
• the upper region being at least 75% amorphous, and the lower region being entirely crystalline;
• one or more dielectric materials within said openings to fill the openings;
• at least one transistor gate over the upper region of the projection;
• at least two source/drain regions that extend into the upper region of the projection, and that do not extend into the lower region of the projection;
• the source/drain regions extending only partially into the upper region of the projection to leave some of the upper region between bottoms of the source/drain regions and a top of the lower region;
• and
• comprising dopant having a mass greater than 40 amu throughout an entirety of the upper region.