Ultrathin spacer formation for carbon-based FET
AssigneeInternational Business Machines Corporation
InventorsZhihong Chen, Dechao Guo, Shu-jen Han, Kai Zhao
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Abstract
A carbon-based field effect transistor (FET) includes a substrate; a carbon layer located on the substrate, the carbon layer comprising a channel region, and source and drain regions located on either side of the channel region; a gate electrode located on the channel region in the carbon layer, the gate electrode comprising a first dielectric layer, a gate metal layer located on the first dielectric layer, and a nitride layer located on the gate metal layer; and a spacer comprising a second dielectric layer located adjacent to the gate electrode, wherein the spacer is not located on the carbon layer.
Claims16
A carbon-based field effect transistor (FET) comprising:
- a substrate;
- a carbon layer located on the substrate, the carbon layer comprising a channel region, and source and drain regions located on either side of the channel region;
- a gate electrode located on the channel region in the carbon layer, the gate electrode comprising a first dielectric layer, a gate metal layer located on the first dielectric layer, and a nitride layer located on the gate metal layer;
- and
- a spacer comprising a second dielectric layer located adjacent to the gate electrode, wherein the spacer is not located on the carbon layer.
Dependencies are inferred from the claim text.