# US 8,274,070 B2 · Semiconductor light-emitting element including an auxiliary electrode

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- Number: US 8,274,070 B2
- Document ID: US8274070B2
- Status: Granted
- Kind: B2
- Application number: 12/929,757
- Filed: 2011-02-14
- Published: 2011-09-01
- Granted: 2012-09-25
- Earliest claimed: 2010-02-26
- Assignees: Toyoda Gosei Co., Ltd.
- Inventors: Masao Kamiya; Yukitaka Hasegawa
- Web page: https://patentgrep.com/patent/US8274070B2

## CPC

- H10H 20/832: characterised by their material
- H10H 20/833: Transparent materials
- H10H 20/831: characterised by their shape
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A semiconductor light-emitting element includes a semiconductor laminated body including a first conductivity type layer, a light-emitting layer and a second conductivity type layer in this order, a transparent electrode formed on the first conductivity type layer and comprising an oxide, and an auxiliary electrode formed between the first conductivity type layer and the transparent electrode, the auxiliary electrode having a higher reflectivity to light emitted from the light-emitting layer, a larger contact resistance with the first conductivity type layer and a smaller sheet resistance than the transparent electrode.

## Claims

### Claim 1

A semiconductor light-emitting element, comprising:
a semiconductor laminated body comprising a first conductivity type layer, a light-emitting layer and a second conductivity type layer in this order;
a transparent electrode formed on the first conductivity type layer and comprising an oxide; and
an auxiliary electrode formed between the first conductivity type layer and the transparent electrode, the auxiliary electrode having a larger contact resistance with the first conductivity type layer and a smaller sheet resistance than the transparent electrode,
wherein both the transparent electrode and the auxiliary electrode contact the first conductivity type layer, and
wherein the transparent electrode extends outward from a periphery of the auxiliary electrode while covering a part of the auxiliary electrode in a top view.

### Claim 2 (depends on 1)

The semiconductor light-emitting element according to claim 1, wherein the auxiliary electrode comprises a linear extending portion.

### Claim 3 (depends on 2)

The semiconductor light-emitting element according to claim 2, further comprising a surface electrode formed on the auxiliary electrode or the transparent electrode so as to overlap at least a portion of the auxiliary electrode in a top view.

### Claim 4 (depends on 3)

The semiconductor light-emitting element according to claim 3, further comprising a second conductivity type layer electrode formed on the second conductivity type layer and comprising the same material as the surface electrode.

### Claim 5 (depends on 4)

The semiconductor light-emitting element according to claim 4, wherein the semiconductor light-emitting element comprises a face-up type semiconductor light-emitting element, and
wherein the surface electrode has a higher bonding strength with a bonding wire than the transparent electrode and the auxiliary electrode.

### Claim 6 (depends on 4)

The semiconductor light-emitting element according to claim 4, wherein the semiconductor light-emitting element comprises a flip-chip type semiconductor light-emitting element, and
wherein the surface electrode has a higher bonding strength with a bump than the transparent electrode and the auxiliary electrode.

### Claim 7 (depends on 3)

The semiconductor light-emitting element according to claim 3, wherein the semiconductor light-emitting element comprises a face-up type semiconductor light-emitting element, and
wherein the surface electrode has a higher bonding strength with a bonding wire than the transparent electrode and the auxiliary electrode.

### Claim 8 (depends on 3)

The semiconductor light-emitting element according to claim 3, wherein the semiconductor light-emitting element comprises a flip-chip type semiconductor light-emitting element, and
wherein the surface electrode has a higher bonding strength with a bump than the transparent electrode and the auxiliary electrode.

### Claim 9 (depends on 1)

The semiconductor light-emitting element according to claim 1, wherein the auxiliary electrode has a higher reflectivity to light emitted from the light-emitting layer than that of the transparent electrode.