Back to results
US 8,274,067 B2Granted
Memory devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung-eon Ahn, Myoung-jae Lee, Suk-pil Kim, Young-soo Park
Life of this patent
Estimating the term…
Abstract
Memory devices and methods of manufacturing the same are provided. In a memory device, a memory-switch structure is formed between a first and second electrode. The memory-switch structure includes a memory resistor and a switch structure. The switch structure controls current supplied to the memory resistor. A memory region of the memory resistor and a switch region of the switch structure are different from each other.
Claims28
A memory device comprising:
- a first electrode;
- a second electrode;
- and
- a switch-memory structure arranged between the first and second electrodes, the switch-memory structure including,
- a memory resistor,
- a switch structure arranged between the first electrode and the memory resistor, the switch structure being configured to control current supplied to the memory resistor, the memory resistor having a memory region, and the switch structure having a switch region, the memory region and the switch region being different from each other in size, and
- an intermediate electrode formed between the memory resistor and the switch structure, the intermediate electrode having an integrally formed contact plug contacting the memory resistor.
4 more elements
A memory array comprising:
- a plurality of first electrodes formed in a first direction;
- a plurality of second electrodes formed in a second direction, the second direction being perpendicular to the first direction;
- and
- a plurality of first switch-memory structures arranged between each of the plurality of first electrodes and a corresponding one of the plurality of second electrodes, each of the first switch-memory structures including,
- a first memory resistor,
- a first switch structure coupled to the first memory resistor, the first switch structure controlling current supplied to the first memory resistor, the first memory resistor having a first memory region, and the first switch structure having a first switch region, the first memory region and the first switch region being different from each other in size, and
- an intermediate electrode formed between the first memory resistor and the first switch structure, the intermediate electrode having an integrally formed contact plug contacting the first memory resistor.
4 more elements
Dependencies are inferred from the claim text.