Back to results
US 8,274,065 B2Granted
Memory and method of fabricating the same
AssigneeMacronix International Co., Ltd.
InventorsKuo-Pin Chang, Erh-Kun Lai
Life of this patent
Estimating the term…
Abstract
A memory, comprising a metal portion, a first metal layer and second metal oxide layer is provided. The first metal oxide layer is on the metal portion, and the first metal oxide layer includes N resistance levels. The second metal oxide layer is on the first metal oxide layer, and the second metal oxide layer includes M resistance levels. The memory has X resistance levels and X is less than the summation of M and N, for minimizing a programming disturbance.
Claims22
A memory, comprising:
- a metal portion;
- a first metal oxide layer on the metal portion, the first metal oxide layer including N resistance levels;
- and
- a second metal oxide layer on the first metal oxide layer, the second metal oxide layer including M resistance levels, wherein the memory has X resistance levels and X is less than the summation of M and N, for minimizing a programming disturbance.
1 more element
A method of forming a memory, comprising:
- providing a metal portion;
- forming a first metal oxide layer on the metal portion, the first metal oxide layer including N resistance levels;
- and
- forming a second metal oxide layer on the first metal oxide layer, the second metal oxide layer including M resistance levels, wherein the memory has X resistance levels and X is less than the summation of M and N, for minimizing a programming disturbance.
1 more element
A memory, comprising:
- a metal portion;
- a first metal oxide layer on the metal portion, the oxygen ratio of the metal oxide at the top of the first metal oxide layer being the highest and gradually decreased as it goes downward the bottom thereof;
- and
- a second metal oxide layer on the first metal oxide layer, the oxygen ratio of the metal oxide at the top of the second metal oxide layer being the highest and gradually decreased as it goes downward the bottom thereof.
1 more element
Dependencies are inferred from the claim text.