# US 8,274,063 B2 · Composite focused ion beam device, process observation method using the same, and processing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,274,063 B2 - Document ID: US8274063B2 - Status: Granted - Kind: B2 - Application number: 12/733,091 - Filed: 2008-08-06 - Published: 2010-11-18 - Granted: 2012-09-25 - Earliest claimed: 2007-08-08 - Assignees: SII NanoTechnology Inc. - Inventors: Takashi Kaito; Yoshitomo Nakagawa; Junichi Tashiro; Yasuhiko Sugiyama; Toshiaki Fujii; Kazuo Aita; Takashi Ogawa - Web page: https://patentgrep.com/patent/US8274063B2 ## CPC - H01J 37/08: Ion sources; Ion guns - H01J 37/3005: {Observing the objects or the point of impact on the object} - H01J 37/3056: {for microworking, e. g. etching of gratings or trimming of electrical components} - G01N 1/04: in the solid state, e.g. by cutting - G01N 1/06: providing a thin slice, e.g. microtome - H01J 2237/0807: Gas field ion sources [GFIS] - H01J 2237/0817: Microwaves - H01J 2237/31745: for preparing specimen to be viewed in microscopes or analyzed in microanalysers - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) ## Abstract A composite focused ion beam device has a first ion beam irradiation system that irradiates a first ion beam for processing a sample and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a plasma type gas ion source that generates first ions for forming the first ion beam, each of the first ions having a first mass. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. Each of the second ions has a second mass smaller than that of the first mass. ## Claims ### Claim 1 A composite focused ion beam device comprising: a first ion beam irradiation system that irradiates a first ion beam for processing a sample, the first ion beam irradiation system having a plasma type gas ion source that generates first ions for forming the first ion beam, the first ions each having a first mass; and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample, the second ion beam irradiation system having a gas field ion source that generates second ions for forming the second ion beam, the second ions each having a second mass smaller than that of the first mass. ### Claim 2 A processing and observation method of a sample, the method comprising the steps of: processing a sample by irradiating the sample with a first ion beam from a first ion beam irradiation system having a plasma type gas ion source that generates first ions for forming the first ion beam, the first ions each having a first mass; and observing the sample by irradiating the sample with a second ion beam from a second ion beam irradiation system having a gas field ion source that generates second ions for forming the second ion beam, the second ions each having a second mass smaller than the first mass. ### Claim 3 (depends on 2) A processing and observation method according to claim 2; wherein the first and second ion beams are simultaneously irradiated on the sample. ### Claim 4 A processing method of a sample, the method comprising the steps of: performing rough processing of a sample by irradiating the sample with a first ion beam from a first ion beam irradiation system having a plasma type gas ion source that generates first ions for forming the first ion beam, the first ions each having a first mass; and performing finishing processing of the sample by irradiating the sample with a second ion beam from a second ion beam irradiation system having a gas field ion source that generates second ions for forming the second ion beam, the second ions each having a second mass smaller than that of the first mass. ### Claim 5 (depends on 1) A composite focused ion beam device according to claim 1; further comprising an electron beam irradiation system for observing the sample. ### Claim 6 (depends on 1) A composite focused ion beam device according to claim 1; wherein the first ion beam irradiation system and the second ion beam irradiation system are configured to irradiate the first ion beam and the second ion beam, respectively, so as to cross each other at an acute angle. ### Claim 7 (depends on 6) A composite focused ion beam device according to claim 6; further comprising a sample pedestal for supporting the sample irradiated by the first and second ion beams, the second ion beam irradiation system being disposed on an upper side of the sample pedestal and the first ion beam irradiation system being positioned obliquely to a vertical direction of the second ion beam irradiation system. ### Claim 8 (depends on 1) A composite focused ion beam device according to claim 1; wherein the first ion beam irradiation system and the second ion beam irradiation system are configured to irradiate the first ion beam and the second ion beam, respectively, so as to be substantially orthogonal to each other. ### Claim 9 (depends on 1) A composite focused ion beam device according to claim 1; wherein the first ion beam irradiation system and the second ion beam irradiation system are configured to irradiate the first ion beam and the second ion beam, respectively, so as to be substantially parallel to each other. ### Claim 10 (depends on 1) A composite focused ion beam device according to claim 1; wherein the second ion is a helium ion. ### Claim 11 (depends on 1) A composite focused ion beam device according to claim 1; the first ion is one or more of rare gas ions selected from neon, argon, xenon and krypton. ### Claim 12 (depends on 1) A composite focused ion beam device according to claim 1; further comprising: a detection device for detecting at least one of a secondary charged particle generated or reflected from the sample by the irradiation of the first ion beam or the second ion beam, and a charged particle transmitted through the sample; and an image display device for displaying an image of the sample based on an output of the detection device. ### Claim 13 (depends on 12) A composite focused ion beam device according to claim 12; wherein the detection device comprises at least one of an electron detector, an ion detector, and a transmitted charged particle detector. ### Claim 14 (depends on 2) A processing and observation method according to claim 2; wherein the sample is irradiated with the first ion beam and the second ion beam so that the first and second ion beams cross each other at an acute angle. ### Claim 15 (depends on 2) A processing and observation method according to claim 2; wherein the sample is irradiated with the first ion beam and the second ion beam so that the first and second ion beams are substantially orthogonal to each other. ### Claim 16 (depends on 2) A processing and observation method according to claim 2; wherein the sample is irradiated with the first ion beam and the second ion beam so that the first and second ion beams are substantially parallel to each other. ### Claim 17 (depends on 4) A processing method according to claim 4; wherein the first and second ion beams are simultaneously irradiated on the sample. ### Claim 18 (depends on 4) A processing method according to claim 4; wherein the sample is irradiated with the first ion beam and the second ion beam so that the first and second ion beams cross each other at an acute angle. ### Claim 19 (depends on 4) A processing method according to claim 4; wherein the sample is irradiated with the first ion beam and the second ion beam so that the first and second ion beams are substantially orthogonal to each other. ### Claim 20 (depends on 4) A processing method according to claim 4; wherein the sample is irradiated with the first ion beam and the second ion beam so that the first and second ion beams are substantially parallel to each other.