US 8,274,057 B2 · Detection element

Abstract

The present invention provides a detection element that can suppress generation of a residual image. A sensor portion includes a semiconductor layer, an upper electrode and a lower electrode. The semiconductor layer generates charges due to light being illuminated thereto. The upper electrode applies a bias voltage to the semiconductor layer. The lower electrode collects charges that have been generated at the semiconductor layer. The charges that have been generated at the semiconductor layer are collected and accumulated by the lower electrode. In the detection element, a saturation prevention circuit (diode and second bias line) is provided through which the accumulated charges flow-out when the charges that have been generated at the semiconductor layer are collected and a voltage level of the lower electrode becomes a saturation prevention voltage level Vs.

Claims18

Dependent claims

A detection element comprising:

a light emitting layer that emits light due to radiation being irradiated thereto;
a semiconductor layer that generates charges due to incident light from the light emitting layer;
a first electrode that applies a bias voltage to the semiconductor layer;
a second electrode that collects charges generated at the semiconductor layer, and in which a voltage level changes so that a potential difference between the second electrode and the first electrode decreases when a charge amount of charges collected and accumulated increases;
and
a saturation prevention circuit connected to the second electrode, and through which the accumulated charges flow when the voltage level of the second electrode reaches a predetermined saturation prevention voltage level having the same polarity as the bias voltage and having an absolute value of the voltage level smaller than the voltage level of the bias voltage.

3 more elements

A detection element comprising:

a semiconductor layer that is formed with amorphous silicon as a main constituent thereof and generates charges due to incident light;
a first electrode that applies a bias voltage to the semiconductor layer;
a second electrode that collects charges generated at the semiconductor layer, and in which a voltage level changes so that a potential difference between the second electrode and the first electrode decreases when a charge amount of charges collected and accumulated increases;
and
a saturation prevention circuit connected to the second electrode, and through which the accumulated charges flow when the voltage level of the second electrode becomes a predetermined saturation prevention voltage level having the same polarity as the bias voltage and having an absolute value of the voltage level smaller than the voltage of the bias voltage.

2 more elements

Dependencies are inferred from the claim text.

Detection element

Life of this patent

Detection element

Life of this patent

Abstract

Claims18