Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern

A method of forming a semiconductor device having a pattern, comprising:

• forming, and subsequently patterning, an object layer on a semiconductor substrate, wherein patterning the object layer includes,
• forming a self-assembly induction layer including a first region and a second region on the semiconductor substrate,
• coating a block copolymer layer on the self-assembly induction layer,
• forming a first pattern, a second pattern and a third pattern by phase separating the block copolymer, wherein the first pattern contains the same material as that of the second pattern, and the third pattern contains a material different from that of the first pattern,
• removing at least one of the first, second and third patterns to form a preliminary pattern, and
• performing an etching process using the preliminary pattern as an etching mask.