Nonvolatile memory device using semiconductor nanocrystals and method forming same
AssigneeInternational Business Machines Corporation
InventorsCharles T. Black, Kathryn Wilder Guarini
Life of this patent
Estimating the term…
Abstract
A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material over said porous dielectric film, and anisotropically and selectively etching said deposited material.
Claims7
A method of making a nanoparticle array, comprising:
- replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film;
- conformally depositing a material over said porous dielectric film;
- anisotropically and selectively etching said deposited material;
- and
- shrinking said nanoparticles by oxidation or etching.
A method of making a nanoparticle array, comprising:
- replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film;
- conformally depositing a material over said porous dielectric film;
- anisotropically and selectively etching said deposited material;
- and
- one of shrinking pores with a spacer process prior to forming said nanoparticles, and enlarging pores by etching prior to said forming said nanoparticles.
A method of making a nanoparticle array, comprising:
- replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film;
- conformally depositing a material over said porous dielectric film;
- anisotropically and selectively etching said deposited material to create the nanoparticle array;
- controlling a dimension of nanoparticles in the nanoparticle array;
- and
- over-etching pores in the porous dielectric film to laterally widen the pores.
A method of making a nanoparticle array, comprising:
- replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film;
- conformally depositing a material over said porous dielectric film;
- anisotropically and selectively etching said deposited material to create the nanoparticle array;
- controlling a dimension of nanopailicles in the nanoparticle array;
- and
- shrinking a size of pores in the porous dielectric film, said shrinking comprising:
- depositing a conformal nitride dielectric material;
- and
- performing an anisotropic silicon nitride etch.
A method of making a nanoparticle array, comprising:
- replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film;
- conformally depositing a material over said porous dielectric film;
- anisotropically and selectively etching said deposited material to create the nanoparticle array;
- and
- controlling a dimension of nanoparticles in the nanoparticle array,
- wherein a spacing of said nanoparticles comprises a variance of no more than 20%.
A method of making a nanoparticle array, comprising:
- replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film;
- conformally depositing a material over said porous dielectric film;
- anisotropically and selectively etching said deposited material to create the nanoparticle array;
- and
- controlling a dimension of nanoparticles in the nanoparticle array,
- wherein a center-to-center spacing between adjacent nanoparticles is controlled to comprise a variance within a range of 10% to about 20%.
A method of making a nanoparticle array, comprising:
- replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film;
- conformally depositing a material over said porous dielectric film;
- anisotropically and selectively etching said deposited material to create the nanoparticle array;
- and
- shrinking a size of pores in the porous dielectric film, said shrinking comprising:
- depositing a conformal nitride dielectric material;
- and
- performing an anisotropic silicon nitride etch.
Dependencies are inferred from the claim text.