Method of forming conductive layer and semiconductor device
AssigneeCanon Kabushiki Kaisha
InventorTakashi Sakaki
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Abstract
Provided are a method of forming a conductive layer on an inner portion of a through-electrode in which uniform adhesion property of plating in the inner portion of a through-hole is enhanced and a tact time is short, and a semiconductor device. The method of forming a conductive layer includes: a first plating step of forming a first plating layer on the inner portion of the through-hole; a plating suppression layer forming step of forming a plating suppression layer including a material different from a material of the first plating layer in an opening portion of the through-hole after the first plating step; and a second plating step of forming a second plating layer by plating on the inner portion of the through-hole after the plating suppression layer forming step.
Claims9
A method of forming a conductive layer on an inner portion of a through-hole which penetrates a substrate, comprising:
- a step of forming a through-hole which penetrates a substrate;
- a first plating step of forming a first plating layer on an inner portion of the through-hole;
- a plating suppression layer forming step of forming a plating suppression layer having an electric conductivity lower than an electric conductivity of the first plating layer at a part on the first plating layer after the first plating step;
- and
- a second plating step of forming a second plating layer by plating on the inner portion of the through-hole after the plating suppression layer forming step.
Dependencies are inferred from the claim text.