Semiconductor device and method of manufacturing the same
AssigneeFujitsu Limited
InventorNaoya Okamoto
Life of this patent
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Abstract
A GaN layer and an n-type AlGaN layer are formed over an insulating substrate, and thereafter, a gate electrode, a source electrode and a drain electrode are formed on them. Next, an opening reaching at least a surface of the insulating substrate is formed in the source electrode, the GaN layer and the n-type AlGaN layer. Then, a nickel (Ni) layer is formed in the opening. Thereafter, by conducting dry etching from the back side while making the nickel (Ni) layer serve as an etching stopper, a via hole reaching the nickel (Ni) layer is formed in the insulating substrate. Then, a via wiring is formed extending from an inside the via hole to the back surface of the insulating substrate.
Claims5
A semiconductor device, comprising:
- a substrate in which a via hole is formed;
- a compound semiconductor layer over said substrate;
- a gate electrode, a source electrode and a drain electrode on said compound semiconductor layer;
- and
- a via wiring extending from an inside of said via hole to a back surface of said substrate,
- wherein an opening which reaches said via wiring is formed in said compound semiconductor layer, and a conductive layer coupled to said source electrode is formed in said opening, and
- a surface of said via wiring is enclosed by an outer edge of said conductive layer at a level where the surface of said via wiring and said conductive layer are contacted with each other in said opening.
A semiconductor device, comprising:
- an insulating substrate in which a via hole is formed;
- a compound semiconductor layer over said insulating substrate;
- a gate electrode, a source electrode and a drain electrode on said compound semiconductor layer;
- and
- a via wiring extending from an inside of said via hole to a back surface of said insulating substrate,
- wherein an opening which reaches said via wiring is formed in said source electrode and said compound semiconductor layer, and a conductive layer is formed in said opening, said conductive layer containing tantalum (Ta) or tantalum nitride (TaN).
Dependencies are inferred from the claim text.