Methods of forming patterns, and methods of forming integrated circuits

A method of forming a pattern, comprising:

• forming a block copolymer assembly over a substrate;
• the block copolymer having first and second subunits, and the assembly having the subunits arranged in a pattern comprising first and second domains;
• wherein the second domain is a matrix formed from the second subunits, and wherein the first domain comprises features formed from the first subunits and entirely contained within the matrix;
• exposing the block copolymer to conditions that cause the features to extrude through the matrix so that an exposed surface of the block copolymer comprises both the first and second subunits;
• selectively coupling metal to the first subunits relative to the second subunits to form a pattern of metal-containing regions and non-metal-containing regions;
• the metal-containing regions having the metal uniformly distributed throughout the entirety of a domain comprising the first subunits and not comprising metal oxide;
• removing at least some of the block copolymer to form a patterned mask corresponding to the metal-containing regions that do not comprise metal oxide;
• and
• transferring a pattern defined by the patterned mask into the substrate with one or more etches.

A method of forming a pattern, comprising:

• forming a block copolymer assembly over a silicon-containing substrate, the block copolymer assembly having first and second subunits arranged in a pattern of at least two domains;
• one of the domains being a first matrix formed from the second subunits, and one of the domains being first features formed from the first subunits;
• the first features being entirely contained within the first matrix;
• exposing the block copolymer to first conditions that cause the first features to be disrupted so that a surface of the block copolymer comprises both the first and second subunits;
• after disrupting the first features, exposing the surface to metal-containing material to couple metal to the first subunits;
• the metal coupling to the first subunits selectively relative to the second subunits;
• exposing the block copolymer to second conditions that cause the block copolymer to redistribute such that the metal migrates from the surface into second features within a second matrix;
• the second matrix comprising the second subunits and the second features comprising the first subunits;
• the second features being entirely surrounded by the second matrix along at least one cross-section;
• removing at least some of the block copolymer to form a patterned mask containing the metal from the second features;
• and
• transferring a pattern defined by the patterned mask into the substrate with one or more etches.

A method of patterning a gate stack, comprising:

• forming a gate stack over a semiconductor substrate;
• wherein the substrate comprises monocrystalline silicon;
• forming a block copolymer assembly over the gate stack, the block copolymer assembly having a two or more domains arranged in a first pattern;
• the first pattern comprising a first matrix formed from second subunits, and comprising first features entirely contained within the first matrix;
• the first features being formed from first subunits;
• exposing the block copolymer to first conditions that cause the first features to be disrupted so that the first subunits extrude through a surface of the block copolymer;
• after disrupting the first features, exposing the surface to metal-containing material to couple metal to the first subunits;
• the metal coupling to the first subunits selectively relative to the second subunits;
• exposing the block copolymer to second conditions that cause the block copolymer to redistribute such that the metal migrates from the surface into second features within a second matrix;
• removing at least some of the block copolymer to form a patterned mask containing the metal from the second features;
• and
• transferring a pattern defined by the patterned mask into the gate stack with one or more etches.