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US 8,273,646 B2Granted
Non-volatile memory device
AssigneeLapis Semiconductor Co., Ltd.
InventorToru Mori
Life of this patent
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Abstract
A non-volatile memory device includes a memory cell region which is formed on a semiconductor substrate to store predetermined information, and a peripheral circuit region which is formed on the semiconductor substrate. The memory cell region includes a gate electrode; and a charge storage layer, the charge storage layer being formed to be a notch or wedge shape having an edge extending into both sides of a bottom end of the gate electrode. The peripheral circuit region includes no charge storage layer therein.
Claims7
A method for fabricating a non-volatile memory device comprises:
- forming a gate electrode on a semiconductor layer;
- forming a thermal oxidation layer and a NSG layer on a surface of the gate electrode;
- removing the NSG layer located only in a memory cell region by a HF treatment to form a notch or wedge shape gap extending into a bottom end of the gate electrode;
- forming a charge storage layer on a surface of the gate electrode and into the notch or wedge shape gap;
- and
- selectively removing the charge storage layer to remain only inside the notch or wedge shape gap of the memory cell region.
3 more elements
Dependencies are inferred from the claim text.