Thin film transistor using a metal induced crystallization process and method for fabricating the same and active matrix flat panel display using the thin film transistor

A method for fabricating a flat panel display, comprising:

• forming a metal layer on a substrate;
• forming a buffer layer on the metal layer;
• forming an amorphous silicon layer on the buffer layer;
• crystallizing the amorphous silicon layer using metal induced crystallization (MIC) by means of the metal layer to form a polycrystalline silicon layer;
• patterning the polycrystalline silicon layer to form an active layer;
• forming a gate insulating layer on the active layer;
• forming a gate electrode on the gate insulating layer;
• forming an interlayer insulating layer on the gate electrode;
• forming source/drain electrodes on the interlayer insulating layer;
• and
• forming a light emitting diode electrically connected to any one of the source/drain electrodes,
• wherein the buffer layer is formed between the metal layer and the amorphous silicon layer,
• wherein an amount of metallic material contained in the active layer ranges from about 1E+11/cm2 to about 1E+12/cm2, and
• wherein the metal layer, the buffer layer, and the amorphous silicon layer are sequentially formed on the substrate.