Semiconductor fabrication method and system
AssigneeMicron Technology, Inc.
InventorSwarnal Borthakur
Life of this patent
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Abstract
A method for manufacturing a semiconductor device is disclosed. In one embodiment, the method includes attaching a carrier to a substrate including a via to form a pressurized sealed cavity between the carrier and the substrate. The method may also include thinning the substrate attached to the carrier and forming a redistribution layer on the thinned substrate in electrical communication with the via, the redistribution layer including a conductive layer formed through atmospheric pressure chemical vapor deposition. Additional methods, devices, and systems are devices, systems, and methods are also disclosed.
Claims21
A method comprising:
- attaching a carrier to a substrate including a via formed in a first side of the substrate to form a pressurized sealed cavity between the carrier and the substrate;
- thinning the substrate while attached to the carrier by removing substrate material from a second side of the substrate opposite the first side to expose the via at the second side of the substrate;
- and
- forming a redistribution layer on the second side of the thinned substrate while attached to the carrier, wherein forming the redistribution layer includes forming a conductive layer in electrical communication with the via at the second side of the substrate through atmospheric pressure chemical vapor deposition.
A method comprising:
- attaching a carrier to a substrate having opposing first and second sides within a pressurized processing chamber to form a pressurized sealed cavity between the carrier and the substrate;
- forming a via in the substrate;
- and
- forming a redistribution layer on the substrate while attached to the carrier, wherein forming the redistribution layer includes forming a conductive layer in electrical communication with the via through atmospheric pressure chemical vapor deposition.
A method comprising:
- attaching a carrier to a substrate having a via to form a pressurized sealed cavity between the carrier and the substrate;
- and
- forming a redistribution layer on the substrate while attached to the carrier, wherein forming the redistribution layer includes forming the redistribution layer entirely through fabrication processes at atmospheric pressure and such that the redistribution layer is in electrical communication with the via.
Dependencies are inferred from the claim text.