Through-gate implant for body dopant
AssigneeInternational Business Machines Corporation
InventorsGeng Wang, Paul C. Parries
Life of this patent
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Abstract
The present invention, provides a semiconductor device including a substrate including a semiconductor layer overlying an insulating layer, wherein a back gate structure is present underlying the insulating layer and a front gate structure on the semiconductor layer; a channel dopant region underlying the front gate structure of the substrate, wherein the channel dopant region has a first concentration present at an interface of the semiconductor layer and the insulating layer and at least a second concentration present at the interface of the front gate structure and the semiconductor layer, wherein the first concentration is greater than the second concentration; and a source region and drain region present in the semiconductor layer of the substrate.
Claims9
A method of forming a semiconductor device comprising:
- providing a substrate including a semiconductor layer overlying an insulating layer, wherein a back gate structure is present underlying the insulating layer;
- forming a front gate structure overlying the semiconductor layer of the substrate;
- and
- implanting a first dopant through the front gate structure into the substrate, wherein the first dopant implanted into a portion of the substrate underlying the front gate structure is present at a depth approximately equal to an interface between the semiconductor layer and the insulating layer and the first dopant implanted into a portion of the substrate adjacent to the portion of the substrate underlying the front gate structure is present at a depth extending into the insulating layer.
Dependencies are inferred from the claim text.