Semiconductor device manufacturing method including exposing electrode layers into a hole
AssigneeKabushiki Kaisha Toshiba
InventorKatsunori Yahashi
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Abstract
A semiconductor device manufacturing method includes: alternately stacking a plurality of insulating layers and electrode layers; forming a hole penetrating through a multilayer body of the insulating layers and the electrode layers; forming a conductive film on an inner wall of the hole; anisotropically etching the conductive film to selectively leave the conductive film on a sidewall of the hole; altering the conductive film into an insulator by heat treatment; and removing the insulator covering the electrode layers to expose the electrode layers into the hole.
Claims15
A semiconductor device manufacturing method comprising:
- alternately stacking a plurality of insulating layers and electrode layers;
- forming a hole penetrating through a multilayer body of the insulating layers and the electrode layers;
- forming a conductive film on an inner wall of the hole;
- anisotropically etching the conductive film to selectively leave the conductive film on a sidewall of the hole;
- altering the conductive film into an insulator by heat treatment;
- and
- removing the insulator covering the electrode layers to expose the electrode layers into the hole.
A semiconductor device manufacturing method comprising:
- forming a recess in a conductive layer;
- burying a sacrificial film in the recess;
- alternately stacking a plurality of insulating layers and electrode layers on the conductive layer having the sacrificial film buried therein;
- forming a hole penetrating through a multilayer body of the insulating layers and the electrode layers;
- forming a conductive film on an inner wall of the hole;
- anisotropically etching the conductive film to selectively leave the conductive film on a sidewall of the hole;
- altering the conductive film into an insulator by heat treatment;
- removing the insulator covering the electrode layers to expose the electrode layers into the hole;
- and
- removing the sacrificial film in the recess through the hole to connect the hole exposing the electrode layers to the recess.
Dependencies are inferred from the claim text.