Method of forming a copper-compatible fuse target

A method of forming a semiconductor wafer comprising:

• forming a trace structure and a target structure to touch a passivation layer, the trace structure and the target structure each having a top surface and each including copper, the target structure having a side wall, touching a top surface of the passivation layer, and being electrically isolated from all other conductive structures, the passivation layer being non-conductive;
• forming a non-conductive structure to touch the passivation layer, the trace structure, and the target structure, the non-conductive structure exposing the top surface of the trace structure and the top surface of the target structure;
• etching the non-conductive structure to form a passivation opening that exposes the top surface of the passivation layer;
• wherein the passivation opening exposes the side wall of the target structure;
• also wherein forming the trace structure and the target structure includes forming a trace member and a target member to touch the passivation layer, the trace member and the target member each having a top surface and each including copper, the target member touching the top surface of the passivation layer;
• and
• forming the non-conductive structure includes planarizing the nonconductive structure to expose the top surface of the trace member and the top surface of the target member.