Super lattice/quantum well nanowires
AssigneeInternational Business Machines Corporation
InventorsHarold J. Hovel, Qiang Huang, Xiaoyan Shao, James Vichiconti, George F. Walker
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Abstract
Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.
Claims13
A method of obtaining a segmented nanowire, comprising:
- forming a first layer of a first material,
- forming a second layer of a second material different from the first material adjacent to the first material, and
- partially removing the first material and the second material, thereby obtaining a segmented nanowire having a segment of the first material and a segment of the second material,
- wherein the forming of the first layer or the forming of the second layer comprises depositing a polycrystalline material, and
- wherein an interface between the segment of the first material and the segment of the second material is oriented in a non-perpendicular angle towards a longitudinal direction of the segmented nanowire.
Dependencies are inferred from the claim text.