Light emitting diode
AssigneeInfineon Technologies AG
InventorsChiang Chau Fatt, Kuek Hsieh Ting
Life of this patent
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Abstract
A semiconductor device including a wafer-level LED includes a semiconductor structure coupled to first and second electrodes. The semiconductor includes a P-doped portion of a first layer to an N-doped portion of a second layer. The first layer includes a surface configured to emit light. The first electrode is electrically coupled to the P-doped portion of the first layer on a first side of the semiconductor structure. The first side is adjacent to the surface that is configured to emit the light. The second electrode is electrically coupled to the N-doped portion of the second layer on a second side of the semiconductor structure. The second side is also adjacent to the surface that configured to emit light.
Claims14
A method of making a light emitting diode, the method comprising:
- providing a semiconductor wafer having a top major surface and a bottom surface opposite the top major surface, wherein the semiconductor wafer includes a plurality of layers between the top major and bottom surfaces, including
- a p-layer having a plurality of first conductors spaced-apart from each other by p-type portions along a length of the semiconductor wafer, and
- an n-layer having a plurality of second conductors spaced-apart by n-type portions and spaced-apart and staggered apart from the plurality of first conductors along the length of the semiconductor wafer;
- forming a translucent layer on the top major surface of the semiconductor wafer;
- forming the semiconductor wafer to include a plurality of troughs along the length of the semiconductor wafer wherein the troughs extend from the bottom surface into the translucent layer and through the first and second conductors, the troughs defining side surfaces of the semiconductor structure along the length of the semiconductor wafer;
- filling the troughs with an electrically conducting material coupled to the side surfaces;
- and
- cutting through each of the filled troughs to form electrodes out of the electrically conducting materials.
A method of making a semiconductor device, the method comprising:
- providing a semiconductor wafer having a top major surface and an opposing bottom surface, wherein providing the semiconductor wafer includes:
- forming a p-layer having a plurality of first conductors spaced-apart from each other by p-type portions along a length of the semiconductor wafer, and
- forming an n-layer having a plurality of second conductors spaced-apart by n-type portions and spaced-apart and staggered apart from the plurality of first conductors along the length of the semiconductor wafer;
- forming the semiconductor wafer to include a plurality of troughs along the length of the semiconductor wafer wherein the troughs extend from the bottom surface to the top major surface and through the first and second conductors;
- filling the troughs with an electrically conducting material;
- cutting through each of the filled troughs to form electrodes out of the electrically conducting material.
Dependencies are inferred from the claim text.