Systems and methods for forming defects on graphitic materials and curing radiation-damaged graphitic materials
AssigneeThe Trustees of Columbia University in the City of New York
InventorsSunmin Ryu, Louis E. Brus, Michael L. Steigerwald, Haitao Liu
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Abstract
Systems and methods are disclosed herein for forming defects on graphitic materials. The methods for forming defects include applying a radiation reactive material on a graphitic material, irradiating the applied radiation reactive material to produce a reactive species, and permitting the reactive species to react with the graphitic material to form defects. Additionally, disclosed are methods for removing defects on graphitic materials.
Claims19
A method of forming defects on a graphitic material, comprising:
- applying a radiation reactive material to at least a portion of a surface of said graphitic material,
- irradiating said radiation reactive material to produce a reactive species therein, and
- permitting said reactive species to react with at least said portion of said surface of said graphitic material to thereby form at least one defect therein,
- wherein said radiation reactive material comprises a molecule selected from the group consisting of a diatomic halogen molecule, hydrogen silsesquioxane, poly(methyl methacrylate), and a peroxide compound.
A method of forming defects on a graphitic material, comprising:
- applying a radiation reactive material to at least a portion of a surface of said graphitic material,
- irradiating said radiation reactive material using one or more electron beams to produce a reactive species therein, and
- permitting said reactive species to react with at least said portion of said surface of said graphitic material to thereby form at least one defect therein,
- the method further comprising irradiating a second portion of said radiation reactive material so as to produce a plurality of defects on said surface of said graphitic material, the plurality of defects forming a geometric pattern, at least a section of which having a resolution of approximately 15 nm.
A device incorporating a hole-doped graphene comprising one or more areas having a first conductance and one or more areas having a second conductance, wherein the first conductance is lower than the second conductance.
Dependencies are inferred from the claim text.