# US 8,273,460 B2 · Composition for preparing organic insulating film, organic insulating film prepared by using the same and organic thin film transistor comprising the organic insulating film > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,273,460 B2 - Document ID: US8273460B2 - Status: Granted - Kind: B2 - Application number: 11/783,136 - Filed: 2007-04-06 - Published: 2008-03-20 - Granted: 2012-09-25 - Earliest claimed: 2006-09-15 - Assignees: Samsung Electronics Co., Ltd. - Inventors: Eun Kyung Lee; Joo Young Kim; Sang Yoon Lee; Jung Seok Hahn - Web page: https://patentgrep.com/patent/US8273460B2 ## CPC - H10K 10/471: {the gate dielectric comprising only organic materials} - H10K 10/464: {Lateral top-gate IGFETs comprising only a single gate} - H10K 10/466: {Lateral bottom-gate IGFETs comprising only a single gate} - Y10T 428/31678: Of metal - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract Disclosed are a composition comprising an organic insulating polymer in which a photo-reactive functional group showing an increased crosslinking degree is introduced into a side-chain, an organic insulating film comprising the composition, an organic thin film transistor (OTFT) comprising the organic insulating film, an electronic device comprising the organic thin film transistor and methods of fabricating the organic insulating film, the organic thin film transistor and the electronic device. The OTFT comprising the organic insulating film of example embodiments may not show any hysteresis during the driving of the OTFT, and therefore, may exhibit a homogeneous property. ## Claims ### Claim 1 A composition comprising an organic insulating polymer represented by the following Formula 1: wherein R is represented by the following Formula 2; the sum of m and n is about 1; m is a real number ranging from about 0.1 to about 0.9; n is a real number ranging from about 0.1 to about 0.9; the sum of x and y is about 1; x is a real number ranging from about 0.1 to about 0.9; y is a real number ranging about 0.1 to about 0.9; the sum of i and j is about 1; and i and j are a real number ranging from about 0 to about 1, respectively (j≠0), wherein R1 is one or more selected from the group consisting of functional groups represented by the following Formula 3; R2 is one or more selected from the group consisting of photo-reactive functional groups represented by the following Formula 4; k is an integer ranging about 0 to about 3; and if R1 is plural, they are identical to or different from each other, wherein m is an integer ranging from about 1 to about 12, ### Claim 2 (depends on 1) The composition according to claim 1, wherein the organic insulating polymer is a polymer represented by the following Formula 5: wherein R has the same meaning as defined in claim 1; the sum of x and y is about 1; x is a real number ranging from about 0.1 to about 0.9; y is a real number ranging from about 0.1 to about 0.9; and p is a real number ranging from about 10 to about 100. ### Claim 3 (depends on 1) The composition according to claim 1, wherein the organic insulating polymer is a polymer represented by any one of the following Formulas: wherein p is a real number ranging from about 10 to about 100; and wherein p is a real number ranging from 10 to 200. ### Claim 4 (depends on 1) The composition according to claim 1, further comprising: one or more crosslinking agents selected from the group consisting of dipentaerythritol pentaacrylate, dipentaerythritol hexaacrylate, polyethylene glycol diacrylate and polyethylene glycol dimethacrylate. ### Claim 5 (depends on 1) The composition according to claim 1, wherein the composition includes about 5% to about 15% by weight of the organic insulating polymer, about 10% to about 40% by weight of a crosslinking agent based on the organic insulating polymer and a residual amount of a solvent. ### Claim 6 (depends on 5) The composition according to claim 5, wherein the solvent is selected from the group consisting of an aliphatic hydrocarbon solvent, an aromatic hydrocarbon solvent, a ketone-based solvent, an ether-based solvent, an acetate-based solvent, an alcohol-based solvent, an amide-based solvent, a silicon-based solvent and a mixture thereof. ### Claim 7 (depends on 1) An organic insulating film comprising the composition according to claim 1. ### Claim 8 (depends on 7) The organic insulating film according to claim 7, wherein the organic insulating film is formed by using any one of spin coating, dip coating, printing, spray coating, roll coating, screen printing and ink spraying. ### Claim 9 (depends on 7) An organic thin film transistor (OTFT) comprising a substrate, and a gate electrode, a gate insulating film, an organic semiconductor layer, a source electrode and a drain electrode on the substrate, wherein the gate insulating film includes the organic insulating film of claim 7. ### Claim 10 (depends on 9) The OTFT according to claim 9, wherein the semiconductor layer is made of a material selected from the group consisting of pentacene, copper phthalocyanine, polythiophene, polyaniline, polyacetylene, polypyrrole, polyphenylene vinylene and derivatives thereof. ### Claim 11 (depends on 9) The OTFT according to claim 9, wherein the gate electrode, the source electrode and the drain electrode are made of a material selected from the group consisting of gold (Au), silver (Ag), nickel (Ni), aluminum (Al), indium tin oxide (ITO) and chrome (Cr). ### Claim 12 (depends on 9) The OTFT according to claim 9, wherein the substrate is made of a material selected from the group consisting of glass, a silicon wafer, polyethylene terephthalate (PET), polycarbonate (PC), polyethersulfone (PES) and polyethylene naphthalate (PEN). ### Claim 13 (depends on 9) The OTFT according to claim 9, wherein the OTFT has a top contact structure, a bottom contact structure or a top gate structure. ### Claim 14 (depends on 9) An electronic device comprising the organic thin film transistor according to claim 9. ### Claim 15 A method of fabricating an organic insulating film comprising forming the organic insulating film including a composition comprising an organic insulating polymer represented by the following Formula 1: wherein R is represented by the following Formula 2; the sum of m and n is about 1; m is a real number ranging from about 0.1 to about 0.9; n is a real number ranging from about 0.1 to about 0.9; the sum of x and y is about 1; x is a real number ranging from about 0.1 to about 0.9; y is a real number ranging about 0.1 to about 0.9; the sum of i and j is about 1; and i and j are a real number ranging from about 0 to about 1, respectively (j≠0), wherein R1 is one or more selected from the group consisting of functional groups represented by the following Formula 3; R2 is one or more selected from the group consisting of photo-reactive functional groups represented by the following Formula 4; k is an integer ranging about 0 to about 3; and if R1 is plural, they are identical to or different from each other, wherein m is an integer ranging from about 1 to about 12, ### Claim 16 (depends on 15) A method of fabricating an organic thin film transistor (OTFT) comprising: forming a gate electrode, a gate insulating film, an organic semiconductor layer, a source electrode and a drain electrode on a substrate, wherein the gate insulating film includes the organic insulating film fabricated according to claim 15. ### Claim 17 (depends on 16) The method according to claim 16, wherein the semiconductor layer is made of a material selected from the group consisting of pentacene, copper phthalocyanine, polythiophene, polyaniline, polyacetylene, polypyrrole, polyphenylene vinylene and a derivative of the materials. ### Claim 18 (depends on 16) The method according to claim 16, wherein the gate electrode, the source electrode and the drain electrode are made of a material selected from the group consisting of gold (Au), silver (Ag), nickel (Ni), aluminum (Al), indium tin oxide (ITO) and chrome (Cr). ### Claim 19 (depends on 16) The method according to claim 16, wherein the substrate is made of a material selected from the group consisting of glass, a silicon wafer, polyethylene terephthalate (PET), polycarbonate (PC), polyethersulfone (PES) and polyethylene naphthalate (PEN). ### Claim 20 (depends on 16) The method according to claim 16, wherein the OTFT has a top contact structure, a bottom contact structure or a top gate structure. ### Claim 21 (depends on 16) A method of fabricating an electronic device comprising: fabricating the organic thin film transistor according to claim 16.