Information recording medium, process for producing the information recording medium, sputtering target and film forming apparatus
AssigneePanasonic Corporation
InventorsTomoyasu Takaoka, Takashi Nishihara, Rie Kojima
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Abstract
In an information recording medium that has an information layer which includes a recording layer capable of undergoing phase transition, the recording layer is formed from a material that contains Sb and S, and has composition represented by the formula (1): SbxS100-x (atomic %) where suffix x represents the proportion in atomic % that satisfies a relationship of 50≦x≦98.
Claims24
An information recording medium comprising N information layers, wherein N is an integer of 2 or larger, and the N information layers are disposed in the order of the Nth information layer, the (N−1)st information layer, the (N−2)nd information layer, . . . , the second information layer and the first information layer from the side where the laser beam is incident, and at least one of the second information layer to the Nth information layer comprises a recording layer capable of undergoing phase change, and the recording layer comprises a material that contains Sb and S and is represented by a formula (1) shown below:
- SbxS100-x(atomic %) (1)
- wherein suffix x represents the proportion in atomic % and satisfies a relationship of 50≦x≦98,
- wherein the recording layer has a thickness in a range of 2 nm to 9 nm,
- wherein the recording layer undergoes phase change when irradiated with a laser beam, and
- wherein the information layer that comprises the recording layer comprises at least a second dielectric layer, the recording layer, a first dielectric layer and a reflective layer disposed in this order from the side whereon the laser beam is incident.
A method for producing an information recording medium comprising N information layers, wherein N is an integer of 2 or larger and the N information layers are disposed in the order of the Nth information layer, the (N−1)st information layer, the (N−2)nd information layer, . . . , the second information layer and the first information layer from the side where the laser beam is incident, and at least one of the second information layer to the Nth information layer comprises a recording layer capable of undergoing phase change, and the recording layer comprises a material that contains Sb and S,
- wherein the method comprises:
- forming an information layer including forming the recording layer by a sputtering method,
- wherein a sputtering target that contains Sb and S is used in the operation of forming the recording layer, and a film that is formed by using the sputtering target comprises a material represented by a formula (1) shown below:
- SbxS100-x(atomic %) (1)
- wherein suffix x represents the proportion in atomic % that satisfies a relationship of 50≦x≦98,
- wherein the recording layer has a thickness in a range of 2 nm to 9 nm, and
- wherein said forming the information layer operation includes forming a reflective layer, forming a first dielectric layer, forming the recording layer and forming a second dielectric layer in this order.
A method for producing an information recording medium comprising N information layers, wherein N is an integer of 2 or larger and the N information layers are disposed in the order of the Nth information layer, the (N−1)st information layer, the (N−2)nd information layer, . . . , the second information layer and the first information layer from the side where the laser beam is incident, and at least one of the second information layer to the Nth information layer comprises a recording layer capable of undergoing phase change, and the recording layer comprises a material the contains Sb and S,
- wherein the method comprises:
- forming an information layer including forming the recording layer by a sputtering method,
- wherein a sputtering target that contains Sb and S is used in the operation of forming the recording layer, and a film that is formed by using the sputtering target comprises a material represented by a formula (1) shown below:
- SbxS100-x(atomic %) (1)
- wherein suffix x represents the proportion in atomic % that satisfies a relationship of 50≦x≦98,
- wherein the recording layer has a thickness in a range of 2 nm to 9 nm,
- wherein said forming the information layer operation includes forming the second dielectric layer, forming the recording layer, forming the first dielectric layer, and forming the reflective layer in this order.
Dependencies are inferred from the claim text.