Methods of depositing a ruthenium film

A method of depositing a ruthenium film, the method comprising:

• loading a substrate into a reactor;
• conducting a plurality of first and second deposition cycles, at least one of the first deposition cycles comprising steps of:
• supplying a ruthenium precursor to the reactor;
• supplying oxygen (O2) gas to the reactor, wherein supplying the oxygen gas comprises supplying the oxygen gas simultaneously with supplying the ruthenium precursor;
• and
• supplying ammonia (NH3) gas to the reactor after supplying the ruthenium precursor and the oxygen gas without supplying the ruthenium precursor and the oxygen gas;
• after the at least one of the first deposition cycles, conducting one or more second deposition cycles, wherein at least one of the second cycles comprises steps of:
• supplying the ruthenium precursor the reactor;
• and
• supplying oxygen gas to the reactor after supplying the ruthenium precursor, wherein ammonia gas is not supplied in the second cycles;
• and
• supplying ammonia gas to the reactor subsequent to the one or more second cycles;
• wherein the temperature of the reactor is maintained at about 200° C. to about 400° C.