Methods of forming semiconductor constructions
AssigneeMicron Technology, Inc.
InventorPrashant Raghu
Life of this patent
Estimating the term…
Abstract
The invention includes methods in which silicon is removed from titanium-containing container structures with an etching composition having a phosphorus-and-oxygen-containing compound therein. The etching composition can, for example, include one or both of ammonium hydroxide and tetra-methyl ammonium hydroxide. The invention also includes methods in which titanium-containing whiskers are removed from between titanium-containing capacitor electrodes. Such removal can be, for example, accomplished with an etch utilizing one or more of hydrofluoric acid, ammonium fluoride, nitric acid and hydrogen peroxide.
Claims12
A method of forming a semiconductor construction, comprising:
- forming upwardly-opening titanium-containing container structures within a first material and over a semiconductor substrate;
- forming silicon within the upwardly-opening titanium-containing container structures;
- after forming the silicon, removing at least some of the first material to expose outer surfaces of the upwardly-opening titanium-containing container structures;
- removing the silicon with an etching solution having at least one phosphorus-and-oxygen-containing compound therein, the etching solution utilized during the removal of the silicon causing formation of whiskers of titanium-containing material from the upwardly-opening titanium-container structures;
- and
- exposing the titanium-containing container structures and whiskers to an etch to remove the whiskers.
Dependencies are inferred from the claim text.