Back to results
US 8,266,555 B2Granted
Method for manufacturing an exposure mask
AssigneeHynix Semiconductor Inc.
InventorCheol kyun Kim
Life of this patent
Estimating the term…
Abstract
A weak point detecting method of the present invention designs a target layout, and compensates an optical proximity effect for the target layout, thereafter, verifies the target layout in which the optical proximity effect is compensated by using an NILS of the target layout, thereby, enabling to reduce the time and cost in detecting a weak point for a full chip regardless of the size and form of a pattern.
Claims11
A method for manufacturing an exposure mask, the method comprising:
- providing a target layout;
- compensating for an optical proximity effect on the target layout;
- verifying the optical proximity effect compensation by comparing a normalized image log slope (NILS) specification with an NILS of the target layout on which the optical proximity effect is compensated;
- and
- making the exposure mask using the target layout after determining that the NILS of the target layout is greater than the NILS specification.
2 more elements
A method for manufacturing an exposure mask, the method comprising:
- providing a target layout;
- compensating for an optical proximity effect on the target layout;
- verifying the optical proximity effect compensation by comparing a normalized image log slope (NILS) specification with an NILS of the target layout on which the optical proximity effect is compensated;
- and
- making the exposure mask using the target layout after determining that the NILS of the target layout is greater than the NILS specification,
- wherein the NILS is a value obtained by multiplying an ILS by a critical dimension of a pattern, where the NILS is obtained by:
- NILS=ILS*x=dI/dx*1/x*x=dI/dx,
- where I indicates an intensity of an illumination source, and x indicates the critical dimension of the pattern, and
- wherein the ILS indicates a variation of a log value of an intensity for a change of the critical dimension of the pattern, where the ILS is obtained by:
- ILS=d(ln I)/dx=1/x*dI/dx.
7 more elements
Dependencies are inferred from the claim text.