Semiconductor integrated circuit device, communication device, information reproducing device, image display device, electronic device, electronic control device, and mobile body
AssigneePanasonic Corporation
InventorTomoyuki Kumamaru
Life of this patent
Estimating the term…
Abstract
In order to suppress an instantaneous carrying current (surge current) and power supply noise caused by the instantaneous carrying current (the surge current), the power supply cutoff structure of a semiconductor integrated circuit device comprises a switching circuit for controlling a power supply to a controlled circuit. The switching circuit includes a plurality of transistors each having a different current capability. The transistors are sequentially provided with a certain regularity, including from a low current capability transistor up to a high current capability transistor.
Claims24
A semiconductor integrated circuit comprising:
- a controlled circuit;
- a switch circuit provided with a plurality of transistors connected in parallel, each having different current capabilities, the switch circuit controlling power supply to the controlled circuit;
- and
- a controller for making the plurality of transistors at a non-conducted state change the non-conducted state to a conducted state at different times, starting with a transistor having a smallest current capability and finishing with a transistor having a largest current capability, wherein:
- each of the plurality of transistors is connected to the controlled circuit,
- the controlled circuit and the switch circuit are disposed in the semiconductor integrated circuit, and
- the plurality of transistors each have the current capabilities in such a way that a variation of a power supply potential generated in the controlled circuit at the time of the transition of the plurality of transistors to the conducted state is made substantively constant.
A communication device comprising:
- a semiconductor integrated circuit comprising:
- a controlled circuit;
- a switch circuit provided with a plurality of transistors connected in parallel, each having different current capabilities, the switch circuit controlling power supply to the controlled circuit;
- and
- a controller for making the plurality of transistors at a non-conducted state change the a non-conducted state to a conducted state at different times, starting with a transistor having a smallest current capability and finishing with a transistor having a largest current capability;
- a high-frequency transmission/reception interface unit connected to the semiconductor integrated circuit device;
- and
- an external input interface unit connected to the semiconductor integrated circuit device, wherein:
- each of the plurality of transistors is connected to the controlled circuit,
- the controlled circuit and the switch circuit are disposed in the semiconductor integrated circuit,
- the plurality of transistors each have the current capabilities in such a way that a variation of a power supply potential generated in the controlled circuit at the time of the transition of the plurality of transistors to the conducted state is made substantively constant, and
- the controller controls the switch circuit based on an electrical signal received by the semiconductor integrated circuit device by way of the high-frequency transmission/reception interface unit or the external input interface unit.
A semiconductor integrated circuit device comprising:
- a controlled circuit;
- a switch circuit provided with a plurality of transistors connected in parallel, each having different current capabilities, the switch circuit controlling power supply to the controlled circuit;
- and
- a controller for making the plurality of transistors at a conducted state at different times change from the conducted state to a non-conducted state, starting with a transistor having a largest current capability and finishing with a transistor having a smallest current capability, wherein:
- each the plurality of transistors is connected to the controlled circuit,
- the controlled circuit and the switch circuit are disposed in the semiconductor integrated circuit, and
- the plurality of transistors respectively have the current capabilities in such a way that a variation of a power supply potential generated in the controlled circuit at the time of the transition of the plurality of transistors to the non-conducted state is made substantially constant.
A communication device comprising:
- a semiconductor integrated circuit device comprising:
- a controlled circuit,
- a switch circuit provided with a plurality of transistors connected in parallel, each having different current capabilities, the switch circuit controlling power supply to the controlled circuit;
- and
- a controller for making the plurality of transistors at a conducted state at different times change from the conducted state to a non-conducted state, starting with the transistor having a largest current capability and finishing with the transistor having a smallest current capability;
- a high-frequency transmission/reception interface unit connected to the semiconductor integrated circuit device;
- and
- an external input interface unit connected to the semiconductor integrated circuit device, wherein:
- each the plurality of transistors is connected to the controlled circuit,
- the controlled circuit and the switch circuit are disposed in the semiconductor integrated circuit,
- the plurality of transistors respectively have the current capabilities in such a way that a variation of a power supply potential generated in the controlled circuit at the time of the transition of the plurality of transistors to the non-conducted state is made substantially constant, and
- the controller controls the switch circuit based on an electrical signal received by the semiconductor integrated circuit device by way of the high-frequency transmission/reception interface unit or the external input interface unit.
A semiconductor integrated circuit comprising:
- a controlled circuit;
- a switch circuit provided with a plurality of transistors connected in parallel, each having different current capabilities, the switch circuit controlling power supply to the controlled circuit;
- and
- a controller for making the plurality of transistors at a non-conducted state change the non-conducted state to a conducted state at different times, starting with a transistor having a relatively small current capability and finishing with a transistor having a relatively large current capability, wherein:
- each of the plurality of transistors is connected to the controlled circuit,
- the controlled circuit and the switch circuit are disposed in the semiconductor integrated circuit, and
- the plurality of transistors each have the current capabilities in such a way that a variation of a power supply potential generated in the controlled circuit at the time of the transition of the plurality of transistors to the conducted state is made substantively constant.
A semiconductor integrated circuit device comprising:
- a controlled circuit;
- a switch circuit provided with a plurality of transistors connected in parallel, each having different current capabilities, the switch circuit controlling power supply to the controlled circuit;
- and
- a controller for making the plurality of transistors at a conducted state at different times change from the conducted state to a non-conducted state, starting with a transistor having a relatively large current capability and finishing with a transistor having a relatively small current capability, wherein:
- each the plurality of transistors is connected to the controlled circuit,
- the controlled circuit and the switch circuit are disposed in the semiconductor integrated circuit, and
- the plurality of transistors respectively have the current capabilities in such a way that a variation of a power supply potential generated in the controlled circuit at the time of the transition of the plurality of transistors to the non-conducted state is made substantially constant.
Dependencies are inferred from the claim text.