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US 8,265,582 B2Granted
Semiconductor device
AssigneeFujitsu Limited
InventorTsuyoshi Takahashi
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a p-type semiconductor layer and an n-type semiconductor layer that are joined by sandwiching a depletion layer with a thickness that allows transmission of a plurality of electrons and holes by direct-tunneling.
Claims15
A semiconductor device comprising:
- a p-type semiconductor layer and an n-type semiconductor layer that are coupled by sandwiching a depletion layer with a thickness that allows transmission of a plurality of electrons by direct tunneling, wherein
- a forbidden band of the n-type semiconductor layer and a forbidden band of the p-type semiconductor layer partially overlap under a state in which a flat band voltage that makes energy bands of the n-type semiconductor layer and the p-type semiconductor layer flat is applied between the n-type semiconductor layer and the p-type semiconductor layer;
- and
- an energy level of a plurality of electrons at an upper end of a valence band of the p-type semiconductor layer is equal to or higher than an energy level of a plurality of electrons at a lower end of a conduction band of the n-type semiconductor layer in a region that is further away from the depletion layer than a bending portion of an energy band which is contiguous with the depletion layer under an equilibrium state without any voltage being applied.
1 more element
A receiver comprising:
- a detector;
- and
- an amplifier that is coupled to the detector, wherein
- the detector includes:
- a p-type semiconductor layer and an n-type semiconductor layer that are joined by sandwiching a depletion layer with a thickness that allows transmission of a plurality of electrons and holes by direct tunneling, wherein
- a forbidden band of the n-type semiconductor layer and a forbidden band of the p-type semiconductor layer partially overlap under a state in which a flat band voltage that makes energy bands of the n-type semiconductor layer and the p-type semiconductor layer flat is applied between the n-type semiconductor layer and the p-type semiconductor layer;
- and
- an energy level of a plurality of electrons at an upper end of a valence band of the p-type semiconductor layer is equal to or higher than an energy level of a plurality of electrons at a lower end of a conduction band of the n-type semiconductor layer in a region that is further away from the depletion layer than a bending portion of the energy band which is contiguous with the depletion layer, under an equilibrium state without any voltage being applied.
5 more elements
Dependencies are inferred from the claim text.