Nonvolatile memory device using variable resistive element
AssigneeSamsung Electronics Co., Ltd.
InventorsByung-Gil Choi, Du-Eung Kim
Life of this patent
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Abstract
A nonvolatile memory device using variable resistive element with reduced layout size and improved performance is provided. The nonvolatile memory device comprising: a main word line; multiple sub-word lines, wherein each of the sub-word line is connected to multiple nonvolatile memory cells; and a section word line driver which controls voltage level of the multiple sub-word lines, wherein the section word line driver includes multiple pull-down elements which are connected to each of the multiple sub-word lines and a common node and a selection element which is connected to the common node and the main word line.
Claims9
A nonvolatile memory device comprising:
- multiple memory cell blocks;
- multiple section word line driver blocks;
- a main word line traversing the multiple memory cell blocks and being coupled to each of the multiple section word line driver blocks;
- a floating prevention circuit which includes elements each directly connected to a corresponding sub-word line and the main word line, wherein
- wherein each of the multiple memory cell blocks includes the multiple sub-word lines connected to corresponding nonvolatile memory cells located in the each of the multiple memory cell blocks;
- and
- each of the multiple section word line driver blocks includes a section word line driver including multiple pull-down transistors and a selection transistor, wherein each of the multiple pull-down transistors has one node connected to a corresponding sub-word line and another node connected to a common node, and the selection transistor has a gate connected to the main word line, one node connected to the common node and another node connected to a ground.
Dependencies are inferred from the claim text.