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US 8,264,889 B2Granted
Memory device and semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorNobuharu Ohsawa
Life of this patent
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Abstract
A memory device has a pair of conductive layers and an organic compound having a liquid crystal property that is interposed between the pair of conductive layers. Data is recorded in the memory device by applying a first voltage to the pair of conductive layers and heating the organic compound, to cause a phase change of the organic compound from a first phase to a second phase.
Claims35
A memory device comprising:
- a first conductive layer;
- a second conductive layer;
- and
- an organic semiconductor interposed between the first conductive layer and the second conductive layer,
- wherein the organic semiconductor has a liquid crystal property,
- wherein the first conductive layer is connectable to a bit line, and
- wherein the second conductive layer is connectable to a word line.
4 more elements
A memory device comprising:
- a first conductive layer;
- a second conductive layer;
- an organic semiconductor interposed between the first conductive layer and the second conductive layer;
- and
- an insulating layer provided so as to cover the second conductive layer,
- wherein the organic semiconductor has a liquid crystal property,
- wherein the first conductive layer is connectable to a bit line, and
- wherein the second conductive layer is connectable to a word line.
5 more elements
A memory device comprising:
- a first conductive layer;
- a second conductive layer;
- an organic semiconductor interposed between the first conductive layer and the second conductive layer;
- an insulating layer provided so as to cover the second conductive layer;
- and
- an element having a rectifying property provided in contact with the first conductive layer,
- wherein the organic semiconductor has a liquid crystal property.
4 more elements
Dependencies are inferred from the claim text.