Nonvolatile memory device and method of programming the same
AssigneeHynix Semiconductor Inc.
InventorsIn Suk Yun, Kee Han Rho
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device includes a memory block including a number of cell strings, a channel voltage detection unit configured to detect channel voltages of the cell strings in which the channel voltages are changed based on voltages supplied to memory cells of the cell strings during a program operation and to generate channel voltage code based on an average channel voltage of the detected channel voltages, and a voltage supply unit configured to change a level of a pass voltage of the voltages supplied to memory cells in which the pass voltage is supplied to the memory cells during the program operation according to the channel voltage code.
Claims11
A nonvolatile memory device, comprising:
- a memory block including a number of cell strings;
- a channel voltage detection unit configured to detect channel voltages of the cell strings in which the channel voltages are changed based on voltages supplied to memory cells of the cell strings during a program operation and to generate channel voltage code based on an average channel voltage of the detected channel voltages;
- and
- a voltage supply unit configured to change a level of a pass voltage of the voltages supplied to memory cells in which the pass voltage is supplied to the memory cells during the program operation according to the channel voltage code.
A method of programming a nonvolatile memory device, the method comprising:
- providing cell strings including memory cells selected by bit lines and word lines;
- supplying a first program voltage to a word line selected from among the word lines, and supplying a first pass voltage to remaining word lines other than the selected word line and, simultaneously, detecting a channel voltage of the cell strings, during a program operation in response to a first program pulse;
- generating a control signal including channel voltage information based on the detected channel voltage;
- and
- supplying a second program voltage to a word line selected from among the word lines, and a second pass voltage, changed in response to the control signal, to remaining word lines other than the selected word line, during a program operation in response to a second program pulse.
A method of programming a nonvolatile memory device, the method comprising:
- providing cell strings including memory cells selected by bit lines and word lines;
- supplying a first program voltage to a word line selected from among the word lines, and supplying a first pass voltage to remaining word lines other than the selected word line and, simultaneously, detecting a channel voltage of the cell strings during a program operation in response to a first program pulse;
- generating a control signal including channel voltage information based on the detected channel voltage;
- supplying a second program voltage to a word line selected from among the word lines, and supplying a second pass voltage, changed in response to the control signal, to remaining word lines other than the selected word line during a program operation in response to a second program pulse;
- generating a control signal including channel voltage information based on the detected channel voltage;
- and
- supplying a third program voltage to a word line selected from among the word lines, and supplying a third pass voltage, changed in response to the control signal, to remaining word lines other than the selected word line during a program operation in response to a third program pulse.
Dependencies are inferred from the claim text.