Charge loss compensation during programming of a memory device

A method for quick charge loss compensation in a memory device, the method comprising:

• determining a first quantity of a plurality of memory cells that are programmed to at least a reference threshold voltage that corresponds to a first threshold voltage distribution;
• subsequent to determining the first quantity and prior to programming to a second threshold voltage distribution, determining a second quantity of the plurality of memory cells that are still programmed to at least the reference threshold voltage;
• generating a verify voltage in response to a difference between the first quantity and the second quantity of memory cells;
• programming the plurality of memory cells to the second threshold voltage distribution;
• and
• program verifying the plurality of memory cells with the generated verify voltage.

A system comprising:

• a controller configured to control operation of the system;
• and
• a memory device coupled to the controller and configured to operate in response to the controller, the memory device comprising:
• a memory array comprising a plurality of memory cells;
• and
• control circuitry configured to control operation of the memory array, wherein the control circuitry is configured to:
• increase threshold voltages for a set of memory cells at a first time, count a first quantity of memory cells having a threshold voltage at least at a reference threshold voltage, count a second quantity of the memory cells having threshold voltages still at least at the reference voltage a time period later, and adjust a subsequent program verify voltage by an amount in response to a difference between the first quantity and the second quantity.