Reprogramming non-volatile memory devices for read disturbance mitigation

A system comprising:

• a non-volatile memory structure comprising a first data area;
• a second data area that stores information, the information comprising a first value corresponding to the first data area, the first value being set responsive to a last programming cycle on the first data area, and a second value indicating a total number of programming or erasing operations on the first data area;
• and
• circuitry configured to selectively reprogram data of the first data area based on the first value and the second value.

An apparatus comprising:

• a non-volatile memory structure comprising data areas;
• write counters corresponding to the data areas, the write counters indicating a number of programming or erasing operations on corresponding ones of the data areas;
• and
• read counters corresponding to the data areas, the read counters indicating a number of read operations on corresponding ones of the data areas, each read counter being set to zero in response to a programming or erasing operation on a corresponding one of the data areas.