Non-volatile semiconductor memory circuit and method of controlling the same
AssigneeHynix Semiconductor Inc.
InventorKyu Sung Kim
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AssigneeHynix Semiconductor Inc.
InventorKyu Sung Kim
Estimating the term…
A non-volatile semiconductor memory circuit for use in compensating for time dependent resistive changes in phase change memory cells is presented. The non-volatile semiconductor memory circuit includes a control signal generation unit and a sensing block. The control signal generation unit is configured to provide a control signal having a voltage level corresponding to a read command or a write command. The sensing block is configured to selectively provide a first sensing reference voltage substantially equal to a reference voltage. The sensing block is also configured to selectively provide a second sensing reference voltage which is lower than the reference voltage. The first and second sensing reference voltages are selectively provided as a function of the voltage level of the control signal in which the first and second sensing reference voltages are used to read data of the memory cell array.
A non-volatile semiconductor memory circuit coupled to a memory cell array, the non-volatile semiconductor memory circuit comprising:
A non-volatile semiconductor memory circuit coupled to a memory cell array, the non-volatile semiconductor memory circuit comprising:
Dependencies are inferred from the claim text.