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US 8,264,869 B2Granted
Semiconductor storage device
AssigneeFujitsu Semiconductor Limited
InventorsToshiya Miyo, Atsumasa Sako
Life of this patent
Estimating the term…
Abstract
A semiconductor storage device includes a memory cell array in which a memory cell including an MOS capacitor is arranged; a power supply unit that supplies a plate voltage to a plate line that is coupled to a gate electrode of the MOS capacitor; and a switch that couples the plate line to a first power supply line when an access to the memory cell array is caused.
Claims8
A semiconductor storage device comprising:
- a memory cell array including a memory cell that includes an MOS capacitor;
- a power supply unit configured to supply a plate voltage to a plate line that is coupled to a gate electrode of the MOS capacitor;
- and
- a switch coupling the plate line to a first power supply line when an access to the memory cell array is caused,
- wherein the switch is configured to detect an access to the memory cell array according to a state of a memory activation signal that activates the memory cell array.
2 more elements
A semiconductor storage device comprising:
- a memory cell array including a memory cell that includes an MOS capacitor;
- a power supply unit configured to supply a plate voltage to a plate line that is coupled to a gate electrode of the MOS capacitor;
- a switch coupling the plate line to a first power supply line when an access to the memory cell array is caused;
- and
- a first resistor element provided between the first power supply line and the switch.
2 more elements
Dependencies are inferred from the claim text.