Memory array with metal-insulator transition switching devices
AssigneeHewlett-Packard Development Company, L.P.
InventorsGilberto Medeiros Ribeiro, Matthew D. Pickett, Jianhua Yang
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Abstract
A memory array with Metal-Insulator Transition (MIT) switching devices includes a set of row lines intersecting a set of column lines and a memory element disposed at an intersection between one of the row lines and one of the column lines. The memory element includes a switching layer in series with an MIT material. A method of accessing a target memory element within a memory array includes applying half of an access voltage to a row line connected to the target memory element, the target memory element comprising a switching layer in series with an MIT material, and applying an inverted half of the access voltage to a column line connected to the target memory element.
Claims19
A memory array with Metal-Insulator Transition (MIT) switching devices, the memory array comprising:
- a set of row lines intersecting a set of column lines;
- and
- a memory element disposed at an intersection between one of said row lines and one of said column lines;
- in which said memory element comprises a switching layer in series with an MIT material, wherein said switching layer is a memristive switching layer.
A method of accessing a target memory element within a memory array, the method comprising:
- applying half of an access voltage to a row line connected to said target memory element, said target memory element comprising a switching layer in series with a Metal-Insulator Transition (MIT) material;
- and
- applying an inverted half of said access voltage to a column line connected to said target memory element.
A memory array comprising:
- addressing circuitry;
- and
- a number of memory blocks, at least one of said memory blocks comprising:
- a number of row lines;
- a number of column lines intersecting said number of row lines;
- and
- memory elements disposed at intersections between said column lines and said row lines, said memory elements comprising a switching layer in series with a Metal-Insulator Transition (MIT) material, wherein said switching layer is a memristive switching layer.
Dependencies are inferred from the claim text.