Nonvolatile semiconductor storage device

A nonvolatile semiconductor storage device having a plurality of operation modes, comprising:

• a plurality of first lines;
• a plurality of second lines that intersect with the plurality of first lines;
• a plurality of memory cells arranged at positions at which the first lines intersect with the second lines, each memory cell including a variable resistive element and a rectifying element that is connected to the variable resistive element in series;
• a first selection unit that charges a first line to be selected from among the plurality of first lines to a first selection voltage;
• and
• a second selection unit that performs an operation for selecting a second line to be selected from among the plurality of second lines in accordance with an operation mode in which the nonvolatile semiconductor storage device operates among the plurality of operation modes by switching between a first operation and a second operation, wherein
• in the first operation, the second selection unit charges the second line to be selected to an unselection voltage, and the second selection unit discharges the second line to be selected to a second selection voltage after the first line to be selected is charged to the first selection voltage by the first selection unit, and
• in the second operation, the second selection unit causes the second line to be selected from among the second lines to be in a floating state before the first line to be selected is charged to the first selection voltage by the first selection unit.