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US 8,264,866 B2Granted
Nonvolatile memory device and method for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorsHiroyuki Fukumizu, Yasuhiro Nojiri, Tsukasa Nakai
Life of this patent
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Abstract
According to one embodiment, a nonvolatile memory device includes a memory cell. The memory cell is connected to a first interconnection and a second interconnection and includes a plurality of layers. The plurality of layers includes a memory layer and a carbon nanotube-containing layer which is in contact with the memory layer and contains a plurality of carbon nanotubes.
Claims16
A nonvolatile memory device comprising:
- a memory cell connected to a first interconnection and a second interconnection,
- the memory cell including a plurality of layers,
- the plurality of layers including:
- a memory layer;
- and
- a carbon nanotube-containing layer being in contact with the memory layer and containing a plurality of carbon nanotubes,
- at least one of the plurality of carbon nanotubes being a multi-wall nanotube.
4 more elements
A nonvolatile memory device comprising:
- a memory cell connected to a first interconnection and a second interconnection,
- the memory cell including a plurality of layers,
- the plurality of layers including:
- a memory layer;
- and
- a carbon nanotube-containing layer being in contact with the memory layer and containing a plurality of carbon nanotubes,
- the carbon nanotube-containing layer including a gap provided with respect to the memory layer.
4 more elements
Dependencies are inferred from the claim text.