Green transistor for nano-Si ferro-electric RAM and method of operating the same
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorsMin-hwa Chi, Deyuan Xiao
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Abstract
The present disclosure provides a green transistor for nano-Si Ferro-electric random access memory (FeRAM) and method of operating the same. The nano-Si FeRAM includes a plurality of memory cells arranged in an array with bit-lines and word-lines, and each memory cell includes a MOSFET including a gate, a source, a drain, a substrate, and a data storage element formed on the drain spacer of the gate and made of nano-Si in porous SiO2; a word-line connected to the gate; a first bit-line connected to the drain; a second bit-line connected to the source; and an substrate bias supply connected to the substrate, and the gate induced drain leakage current of the MOSFET serves as the read current of the memory cell.
Claims8
A nano-Si FeRAM, including a plurality of memory cells arranged in an array with bit-lines and word-lines, the bit-lines including first bit-lines and second bit-lines, each memory cell comprising:
- a MOSFET including a gate, a source, a drain, a substrate, and two data storage elements formed on the two spacers of the gate and made of nano-Si in porous SiO2;
- a word-line connected to the gate;
- a first bit-line connected to the drain;
- a second bit-line connected to the source;
- and
- a substrate bias supply connected to the substrate,
- wherein the GIDL current of the MOSFET serves as the read current of the memory cell.
Dependencies are inferred from the claim text.