Electronic circuit control element with tap element

A high voltage transistor, comprising:

• a drain region of N type semiconductor material;
• a source region of N type semiconductor material;
• an N type tap region of N type semiconductor material;
• a body region of P type semiconductor material adjoining the source region;
• a drift region of N type semiconductor material extending from the drain region to the body region;
• a tap drift region of N type semiconductor material extending from the drain region to the tap region, wherein the tap region adjoins the tap drift region at an end of the tap drift region opposite the drain region;
• and
• P type regions disposed on neighboring sides of the tap drift region for substantially depleting the tap drift region of free charge carriers in response to a voltage between the drain region and the source region exceeding a pinch off voltage, such that a voltage between the tap region and the source region is substantially constant and less than the voltage between the drain region and the source region.