Liquid crystal display
AssigneeHannstar Display Corp.
InventorsTsu-Chiang Chang, Po-Yang Chen, Chao-Hui Wu, Po-Sheng Shih
Life of this patent
Estimating the term…
Abstract
The present invention provides a method for forming a pixel element. The method comprises: forming a first patterned metal layer within the pixel area; forming an insulation layer on the first patterned metal layer; forming a semiconductor layer on the insulation layer; patterning the semiconductor layer to form bend seed generation portion; and forming a second metal layer to connect the semiconductor layer.
Claims14
A Liquid Crystal Display, said Liquid Crystal Display comprising a pixel array formed on a thin-film transistor substrate and defined by a plurality of data lines and a plurality of gate lines, said pixel array comprising a plurality of pixel elements and each pixel element comprising:
- a gate line or a common line formed on said thin-film transistor substrate;
- an insulation layer formed on said gate line or said common line;
- a semiconductor layer having a plurality of bend seed generation portions formed on said insulation layer;
- a data line formed on said semiconductor layer, said data line connecting to said semiconductor layer;
- and
- a thin-film transistor, comprising a gate, a source, and a drain;
- wherein said semiconductor layer having said bend seed generation portions is located at the intersection of said data line and said gate line or located at the intersection of said data line and said common line, and during a start-up operation, said data line and said gate line or said data line and said common line generates a transverse electrical field, and whereby said bend seed generation portions generate bend seeds to transform a state of a liquid crystal layer from a splay state to a bend state.
A Liquid Crystal Display, said Liquid Crystal Display comprising a pixel array formed on a thin-film transistor substrate, said pixel array comprising a plurality of pixel elements and each pixel element comprising:
- a gate line or a common line formed on said thin-film transistor substrate;
- an insulation layer formed on said gate line or said common line;
- a semiconductor layer having a plurality of bend seed generation portions formed on said insulation layer;
- a second electrode layer formed on said semiconductor layer, said second electrode layer connecting to said semiconductor layer;
- and
- a thin-film transistor, comprising a gate, a source, and a drain;
- wherein said semiconductor layer having said bend seed generation portions is located between said gate line and said second electrode layer or located between said common line and said second electrode layer, and during a start-up operation, said second electrode layer and said gate line or said second electrode layer and said common line generate a transverse electrical field, and whereby said bend seed generation portions generate bend seeds to transform a state of a liquid crystal layer from a splay state to a bend state.
Dependencies are inferred from the claim text.